SPECTRAL RESPONSE OF SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS SILICON: EFFECTS OF GAP STATESARENE E; BAIXERAS J; LONGEAUD C et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4531-4533; BIBL. 14 REF.Article

Analysis of the steady-state photocarrier grating method for the determination of the density of states in semiconductorsSCHMIDT, J. A; LONGEAUD, C.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 12, pp 125208.1-125208.13, issn 1098-0121Article

The influence of hopping on modulated photoconductivityLONGEAUD, C; TOBBECHE, S.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 4, issn 0953-8984, 045508.1-045508.12Article

Deconvolution of the transient photocurrent signals : application to the study of the density of states of a BTO crystalLONGEAUD, C; MAIN, C.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 13, issn 0953-8984, 135217.1-135217.5Article

Trapping and recombination via dangling bonds in amorphous and glassy semiconductors under steady-state conditions : application to the modulated photocurrent experimentLONGEAUD, C; KLEIDER, J. P.Physical review. B, Condensed matter. 1993, Vol 48, Num 12, pp 8715-8741, issn 0163-1829Article

Determination of the density of states of the conduction-band tail in amorphous materials : application to a-Si_1-xGe_x:H alloysLONGEAUD, C; VANDERHAGHEN, R.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1990, Vol 61, Num 2, pp 277-291, issn 0141-8637Article

Density of states in Bi₁₂TiO₂₀ from time-of-flight measurementsLONGEAUD, C; BELGACEM, H; DOUAY, C et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 47, issn 0953-8984, 476202.1-476202.20Article

Determination of defect level parameters in semi-insulating GaAs:Cr from transient photocurrent experimentBELGACEM, H; MERAZGA, A; LONGEAUD, C et al.Semiconductor science and technology. 2005, Vol 20, Num 1, pp 56-61, issn 0268-1242, 6 p.Article

Modulated photocurrent to characterize the density of states of thin film semiconductors in the recombination regimeGUEUNIER, M. E; LONGEAUD, C; KLEIDER, J. P et al.EPJ. Applied physics (Print). 2004, Vol 26, Num 2, pp 75-85, issn 1286-0042, 11 p.Article

Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonanceDAO, T. H; GUEUNIER-FARRET, M. E; LEEMPOEL, P et al.Thin solid films. 2007, Vol 515, Num 19, pp 7650-7653, issn 0040-6090, 4 p.Conference Paper

Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic propertiesVIGNOLI, S; MELINON, P; MASENELLI, B et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 8, pp 1279-1288, issn 0953-8984, 10 p.Article

Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopyGUEORGUIEVA, M. J; MAIN, C; REYNOLDS, S et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 541-545, issn 0022-3093, aConference Paper

Some electronic and metastability properties of a new nanostructured material : hydrogenated polymorphous siliconBUTTE, R; MEAUDRE, R; MEAUDRE, M et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1999, Vol 79, Num 7, pp 1079-1095, issn 1364-2812Article

Theoretical analysis and experimental results on the modulated photocarrier grating techniqueSCHMIDT, J. A; BUDINI, N; VENTOSINOS, F et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 3, pp 556-560, issn 1862-6300, 5 p.Conference Paper

Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent techniqueLONGEAUD, C; KLEIDER, J. P; KAMINSKI, P et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 4, issn 0953-8984, 045801.1-045801.14Article

Influence of light-soaking and annealing on the microstructure of a-Si:H deposited at 423 KROY, D; LONGEAUD, C; SAADANE, O et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 511-515, issn 0022-3093, aConference Paper

From amorphous to polycrystalline thin films : dependence on annealing time of structural and electronic propertiesMOHAMMED-BRAHIM, T; KIS-SION, K; BRIAND, D et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 962-966, issn 0022-3093, bConference Paper

Low band gap amorphous silicon deposited under He dilution in the γ regime of an rf glow discharge : properties and stabilityMIDDYA, A. R; HAZRA, S; RAY, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1067-1071, issn 0022-3093, 2Conference Paper

a-Si:H transport parameters from experiments based on photoconductivityLONGEAUD, C; SCHMIDT, J. A.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2052-2056, issn 0022-3093, 5 p.Conference Paper

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition ratesGUEUNIER-FARRET, M. E; BAZIN, C; LEEMPOEL, P et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1913-1916, issn 0022-3093, 4 p.Conference Paper

Investigation of bandgap states using the modulated photocurrent technique in both high and low frequency regimesKLEIDER, J. P; LONGEAUD, C; GUEUNIER, M. E et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 390-399, issn 0022-3093, 10 p.Conference Paper

Properties of Si:H thin films deposited by rf-PECVD of silane-argon mixtures with variation of the plasma conditionPARTHA PRATIM RAY; NAMITA DUTTA GUPTA; CHAUDHURI, Partha et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 123-127, issn 0022-3093, aConference Paper

Anisotropy in the transport of microcrystalline siliconUNOLD, T; BRÜGGEMANN, R; KLEIDER, J. P et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 325-330, issn 0022-3093, 6 p., aConference Paper

Density of states and capture cross-sections in annealed and light-soaked hydrogenated amorphous silicon layersLONGEAUD, C; KLEIDER, J. P.Journal of non-crystalline solids. 1996, Vol 198200, pp 355-358, issn 0022-3093, 1Conference Paper

Influence on the transport properties of the deposition temperature of a-Si:H films deposited from mixtures of silane in helium at high deposition ratesKLEIDER, J. P; LONGEAUD, C; ROCA I CABARROCAS, P et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 403-406, issn 0022-3093, 1Conference Paper